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revisions ltr description date (yr -mo -da) approved rev sheet rev sheet 15 16 17 18 19 20 21 22 23 rev status rev of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by kenneth rice defense supply center columbus standard microcircuit drawing checked by jeff bowling columbus, ohio 43216 http://www.dscc.dla.mil this drawing is available for use by all departments approved by raymond monnin microcircuit, memory, digital, cmos, field programmable gate array, 20,000 gates, monolithic silicon and agencies of the department of defense drawing approval date 99 - 01 - 22 amsc n/a revision level size a cage code 67268 5962 - 99527 sheet 1 of 23 dscc form 2233 apr 97 5962 -e091-99 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 - 99527 01 q x c | | | | | | | | | | | | | | | | | | federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (s ee 1.2.4) (see 1.2.5) \ / ( see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash ( -) indicates a non -rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function bin speed 01 a32200dx 20,000 gate, field programmable gate arra y 227 ns 02 a32200dx-1 20,000 gate, field programmable gate array 192 ns 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self -certification to the requirements for mil-std-883 compliant, non -jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x see figure 1 1 / 256 ceramic quad flat pack y see figure 1 1 / 208 ceramic quad flat pack 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1 / all exposed metalized areas and leads are gold plated 100 microinches (2.5 m m) min. thickness over 80 to 350 microinches (2.0 to 8.9 m m) thickness of nickel.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 2 / dc supply voltage range (v dd ) ------------------------------- -0.5 v dc to +7.0 v dc input voltage range (v i ) - -------------------------------- ------- -0.5 v dc to v dd + 0.5 v dc output voltage range (v o ) -------------------------------- ------ -0.5 v dc to v dd + 0.5 v dc i/o source sink current (i io ) -------------------------------- --- 20 ma storage temperature range (t stg ) -------------------------- -65 c to +150 c lead temperature (soldering, 10 seconds) --------------- 300 c thermal resistance, junction-to-case ( q jc ) ---------------- case outline x and y -------------------------------- ----------- 10 c/ w 3 / maximum junction temperature (t j ) ----------------------- +150 c 1.4 recommended operating conditions . supply voltage (v dd ) -------------------------------- ---------- +4.5 v dc to +5.5 v dc case operating temperature range (t c ) ---------------- -55 c to +125 c 1.5 digital logic testing for device classes q and v . fault coverage measurement of manufacturing logic tests (mil -std -883, test method 5012 ) ----------- 100 percent 4 / 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards ( dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standard s department of defense mil-std-883 - test method standard microcircuits. mil-std-973 - configuration management. mil-std-1835 - interface standard for microcircuit case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings ( smd's ). mil -hdbk -780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 3 / when a thermal resistance for this case is specified in mil-std-1835 that value shall supersede the value indicated herein. 4 / 100 percent test coverage of blank programmable logic devices.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 4 dscc form 2234 apr 97 2.2 non-government publications . the following documents form a part of this document to the extent specified herein. unless otherwise specified, the issues of the documents which are dod adopted are those listed in the issue of the dodiss cited in the solicitation. unless otherwise specified, the issues of documents not listed in the dodiss are the issues of the documents cited in the solicitation. american society for testing and materials (astm) astm standard f1192-95 - standard guide for the measurement of single event procedures from heavy ion irradiation of semiconductor devices. (applications for copies of astm publications should be addressed to the american society for testing and materials, 1916 race street, philadelphia, pennsylvania 19103). electronics industries alliance (eia) jedec standard no. 17 - a standard test procedure for the characterization of latch-up in cmos integrated circuits. (applications for copies should be addressed to the electronics industries alliance, 2500 wilson blvd., arlington, va 22201.) (non-government standards and other publications are normally available from the organizations that prepare or distribute the documents. these documents also may be available in or through libraries or other informational services.) 2.3 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s) . the case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 2. 3.2.3 truth table(s) . 3.2.3.1 unprogrammed devices . the truth table or test vectors for unprogrammed devices for contracts involving no altered item drawing is not part of this drawing. when required in screening (see 4.2 herein) or quality conformance inspection group a, b, c, d, or e (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test. a minimum of 50 percent of the total number of logic modules shall be utilized or at least 25 percent of the total logic modules shall be utilized for any altered item drawing pattern. 3.2.3.2 programmed devices . the truth table or test vectors for programmed devices shall be as specified by an attached altered item drawing. 3.3 electrical performance characteristics and postirradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i and shall apply over the full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table iia. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 5 dscc form 2234 apr 97 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml -38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc -va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc -va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-std-973. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 42 (see mil-prf-38535, appendix a). 3.11 processing options . since the device is capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations, two processing options are provided for selection in the contract. 3.11.1 unprogrammed device delivered to the user . all testing shall be verified through group a testing as defined in 3.2.3.1 and table iia. it is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 3.11.2 manufacturer-programmed device delivered to the user . all testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil -std -883, and shall be conducted on all devices prior to quality confor mance inspection. 4.2.1 additional criteria for device class m . a. delete the sequence specified as initial (pre -burn -in) electrical parameters through interim (post -burn -in) electrical parameters of method 5004 and substitute lines 1 through 6 of table iia herein. b. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. for device class m the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (1) dynamic burn -in for device classes m (method 1015 of mil -std -883, test condition d ; for circuit, see 4.2.1b herein). c. interim and final electrical test parameters shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn -in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn -in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil- std-883.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 6 dscc form 2234 apr 97 b. interim and final e lectrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf- 38535 including groups a, b, c, d, and e inspections and as specified herein except where option 2 of mil-prf-38535 permits alternate in -line control testing. quality conformance inspection for device class m shall be in accordance with mil-prf-38535 , appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil -std -883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 5 and 6 of table i of method 5005 of mil -std -883 shall be omitted. c. subgroup 4 (c in and c out measurements) shall be measured only for initial qualification and after any process or design changes which may affect input or output capacitance. capacitance shall be measured between the designated terminal and gnd at a frequency of 1 mhz. sample size is five devices with no failures on a minimum of ten worst case pins from each device. d. o/v (latch -up) tests shall be measured only for initial qualification and after any design or process changes which may affect the performance of the device. for device class m procedures and circuits shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing activity or acquiring activity upon request. for device classes q and v, the procedures and circuits shall be under the control of the device manufacturer's technical review board (trb) in accordance with mil-prf-38535 and shall be made available to the preparing activity or acquiring activity upon request. testing shall be on all pins, on 5 devices with zero failures. latch -up test shall be considered destructive. information contained in jedec standard number 17 may be used for reference. e. programmed device (see 3.2.3.2) - for device class m, subgroups 7, 8a, and 8b tests shall consist of verifying the functionality of the device. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. these tests shall have been fault graded in accordance with mil -std -883, test method 5012 (see 1.6 herein). f. unprogrammed devices shall be tested for programmability and dc and ac performance compliance to the requirements of group a, subgroups 1 and 7. (1) a sample shall be selected from each wafer lot to satisfy programmability requirements. eight devices shall be submitted to programming (see 3.2.3.1). if any device fails to program, the lot shall be rejected. at the manufacturer's option, the sample may be increased to 18 total devices with no more than two total device failures allowable. (2) these eight devices shall also be submitted to the requirements of the specified tests of group a, subgroups 1 and 7. if any device fails, the lot shall be rejected. at the manufacturer's option, the sample may be increased to 18 total devices with no more than two total device failures allowable. (3a) eight devices from the programmability sample shall be submitted to the requirements of group a, subgroups 9 for binning circuit delay only. if any device fails, the lot shall be rejected. at the manufacturer's option, the sample may be increased to 18 total devices with no more than two total device failures allowable. (3b) if the binning circuit is tested on 100 percent of the products, then the above requirement (3a) is met. 4.4.2 group c inspection . the group c inspection end -point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady -state life test conditions, method 1005 of mil -std -883: a. test condition d. the test circuit shall be maintained by th e manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. b. t a = +125 c, minimum.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 7 dscc form 2234 apr 97 c. test duration : 1,000 hours, except as permitted by method 1005 of mil -std -883. 4.4.2.2 additional criteria for device classes q and v . the steady -state life t est duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb, in accordance with mil-prf- 38535, and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end -point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end -point electrical parameters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness a ssured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end -point electrical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table iia herein. c. when specified in the purchase order or contract, a copy of the rha delta lim its shall be supplied. 4.5 delta measurements for device class v . delta measurements, as specified in table iia, shall be made and recorded before and after the required burn -in screens and steady -state life tests to determine delta compliance. the el ectrical parameters to be measured, with associated delta limits are listed in table iib. the device manufacturer may, at his option, either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and 9. 4.6 programming procedures . the programming procedures shall be as specified by the device manufacturer and shall be made available upon request. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished in accordance with mil-std-973 using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0525. 6.4 comments . comments on this drawing should be directed to dscc- va , columbus, ohio 43216-5000, or telephone (614) 692 -0674. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics . limits test symbol conditions 1 / 4.5 v < v cc < 5.5 v -55 o c < t c < +125 o c unless otherwise specified group a subgroups device type min max unit high level output voltage v oh test one output at a time, v cc = 4.5 v, i oh = -4.0 ma 1, 2, 3 all 3.7 v low level output voltage v ol test one output at a time, v cc = 4.5 v, i ol = 6.0 ma 1, 2, 3 all 0.4 v low level input voltage v il 1, 2, 3 all -0.3 0.8 v high level input voltage v ih 1, 2, 3 all 2.0 v cc +0.3 v standby supply current i dd outputs unloaded, v cc = 5.5 v, v in = v cc or gnd 1, 2, 3 all 25 ma input leakage current i il v cc = 5.5 v, v in = v cc or gnd 1, 2, 3 all -10 10 a output leakage current i oz v cc = 5.5 v, v o = v cc or gnd 1, 2, 3 all -10 10 a i/o terminal capacitance c i/o see 4.4.1c, f= 1.0 mhz, v out = 0 v 4 all 20 pf functional tests ft 2 / see 4.4.1e, v o = 0 v, v cc = 4.5 v 7, 8a, 8b all 01 227 binning circuit delay t pblh , t pbhl see figure 3, v il = 0 v, v ih = 3.0 v, v cc = 4.5 v, v out = 1.5 v 3 / 9, 10, 11 02 192 ns 1 / all tests shall be performed under the worst case condition unless otherwise specif ied 2 / devices are functionally tested using a serial scan test method. data is shifted into the sdi pin and the dclk pin is used as a clock. the data is used to drive the inputs of the internal logic and i/o modules, allowing a complete functional test to be performed. the outputs of the module can be read by shifting out the output response or by monitoring the pra, prb, or sdo pins. these tests form a part of the manufacturer?s test tape and shall be maintained and available at the approved source(s) of supply upon request by preparing or acquiring activity. 3 / binning circuit delay is defined as the input-to-output delay of a special path called the "binning circuit". the binning circuit consists of one input buffer plus 16 combinatorial logic modules plus one output buffer. the logic modules are distributed along the left side of the device. these modules are configured as non-inverting buffers and are connected through programmed antifuses with typical capacitive loading.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 9 dscc form 2234 apr 97 case outline x min. norm. max. a 2.78 3.17 3.56 a1 2.43 2.79 3.15 b 0.18 0.20 0.22 c 0.11 0.15 0.17 d1/ e1 35.64 36.00 36.36 d2/ e2 31.5 bsc e 0.50 bsc f1 22.98 23.11 23.23 f4 22.61 22.86 23.11 l1 74.60 75.00 75.40 l2 69.87 70.00 70.13 l3 55.80 56.30 56.80 h 65.77 65.90 66.03 weight 20gm typ. note: all dimensions are in millimeters. figure 1. case outlines.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 10 dscc form 2234 apr 97 case outline y min. norm. max. a 2.79 3.18 3.57 a1 2.44 2.80 3.16 b 0.18 0.20 0.22 c 0.08 0.13 0.18 d1 28.96 29.21 29.46 d2 25.5 bsc e 0.50 bsc f1 22.98 23.11 23.23 f4 22.61 22.86 23.11 l1 74.60 75.00 75.40 l2 69.87 70.00 70.13 l3 55.80 56.30 56.80 h 65.77 65.90 66.03 weight 18.5gm typ. note: all dimensions are in millimeters. figure 1. case outline ? continued.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 11 dscc form 2234 apr 97 case outline x device types all device types all device types all terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol 1 nc 44 i/o 87 wd, i/o 2 gnd 45 i/o 88 wd, i/o 3 i/o 46 i/o 89 i/o 4 i/o 47 i/o 90 i/o 5 i/o 48 gnd 91 i/o 6 i/o 49 i/o 92 i/o 7 i/o 50 i/o 93 i/o 8 i/o 51 i/o 94 i/o 9 i/o 52 i/o 95 vcc 10 gnd 53 i/o 96 vcc 11 i/o 54 i/o 97 gnd 12 i/o 55 i/o 98 gnd 13 i/o 56 i/o 99 i/o 14 i/o 57 i/o 100 i/o 15 i/o 58 i/o 101 i/o 16 i/o 59 i/o 102 i/o 17 i/o 60 vcc 103 i/o 18 i/o 61 gnd 104 i/o 19 i/o 62 gnd 105 wd, i/o 20 i/o 63 nc 106 wd, i/o 21 i/o 64 nc 107 i/o 22 i/o 65 nc 108 i/o 23 i/o 66 i/o 109 wd, i/o 24 i/o 67 tdo,sdo, i/o 110 wd, i/o 25 i/o 68 i/o 111 i/o 26 vcc 69 wd, i/o 112 qclka,i/o 27 i/o 70 wd, i/o 113 i/o 28 i/o 71 i/o 114 gnd 29 vsv,vcc 72 vcc 115 i/o 30 vcc 73 i/o 116 i/o 31 gnd 74 i/o 117 i/o 32 vpp,vcc 75 i/o 118 i/o 33 vks,gnd 76 wd, i/o 119 vcc 34 tck, i/o 77 gnd 120 i/o 35 i/o 78 wd, i/o 121 wd, i/o 36 gnd 79 i/o 122 wd, i/o 37 i/o 80 qclkb,i/o 123 i/o 38 i/o 81 i/o 124 i/o 39 i/o 82 i/o 125 tdi, i/o 40 i/o 83 i/o 126 tms, i/o 41 i/o 84 i/o 127 gnd 42 i/o 85 i/o 128 nc 43 i/o 86 i/o 129 nc figure 2. terminal connections .
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 12 dscc form 2234 apr 97 case outline x device types all device types all device types all terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol 130 nc 173 i/o 215 wd, i/o 131 gnd 174 i/o 216 wd, i/o 132 i/o 175 i/o 217 i/o 133 i/o 176 i/o 218 prb,i/o 134 i/o 177 i/o 219 i/o 135 i/o 178 i/o 220 clkb, i/o 136 i/o 179 i/o 221 i/o 137 i/o 180 gnd 222 gnd 138 i/o 181 i/o 223 gnd 139 gnd 182 i/o 224 vcc 140 i/o 183 i/o 225 vcc 141 i/o 184 i/o 226 i/o 142 i/o 185 i/o 227 clka,i/o 143 i/o 186 i/o 228 i/o 144 i/o 187 i/o 229 pra,i/o 145 i/o 188 mode 230 i/o 146 i/o 189 vcc 231 i/o 147 i/o 190 gnd 232 wd, i/o 148 i/o 191 nc 233 wd, i/o 149 i/o 192 nc 234 i/o 150 i/o 193 nc 235 i/o 151 i/o 194 i/o 236 i/o 152 i/o 195 dclk,i/o 237 i/o 153 i/o 196 i/o 238 i/o 154 i/o 197 i/o 239 i/o 155 vcc 198 i/o 240 qclkd,i/o 156 i/o 199 wd, i/o 241 i/o 157 i/o 200 wd, i/o 242 wd, i/o 158 vsv,vcc 201 vcc 243 gnd 159 vcc 202 i/o 244 wd, i/o 160 gnd 203 i/o 245 i/o 161 i/o 204 i/o 246 i/o 162 i/o 205 i/o 247 i/o 163 i/o 206 gnd 248 vcc 164 i/o 207 i/o 249 i/o 165 gnd 208 i/o 250 wd, i/o 166 i/o 209 qclkc,i/o 251 wd, i/o 167 i/o 210 i/o 252 i/o 168 i/o 211 wd, i/o 253 sdi, i/o 169 i/o 212 wd, i/o 254 i/o 170 vcc 213 i/o 255 gnd 171 i/o 214 i/o 256 nc 172 i/o figure 2. terminal connections - continued .
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 13 dscc form 2234 apr 97 case outline y device types all device types all device types all device types all terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol 1 gnd 53 gnd 105 gnd 157 gnd 2 vcc 54 tms, i/o 106 vcc 158 i/o 3 mode 55 tdi, i/o 107 i/o 159 sdi, i/o 4 i/o 56 i/o 108 i/o 160 i/o 5 i/o 57 i/o (wd) 109 i/o 161 i/o (wd) 6 i/o 58 i/o (wd) 110 i/o 162 i/o (wd) 7 i/o 59 i/o 111 i/o 163 i/o 8 i/o 60 vcc 112 i/o 164 vcc 9 i/o 61 i/o 113 i/o 165 i/o 10 i/o 62 i/o 114 i/o 166 i/o 11 i/o 63 i/o 115 i/o 167 i/o 12 i/o 64 i/o 116 i/o 168 i/o (wd) 13 i/o 65 qclka, i/o 117 i/o 169 i/o (wd) 14 i/o 66 i/o (wd) 118 i/o 170 i/o 15 i/o 67 i/o (wd) 119 i/o 171 qclkd, i/o 16 i/o 68 i/o 120 i/o 172 i/o 17 vcc 69 i/o 121 i/o 173 i/o 18 i/o 70 i/o (wd) 122 i/o 174 i/o 19 i/o 71 i/o (wd) 123 i/o 175 i/o 20 i/o 72 i/o 124 i/o 176 i/o (wd) 21 i/o 73 i/o 125 i/o 177 i/o (wd) 22 gnd 74 i/o 126 gnd 178 pra, i/o 23 i/o 75 i/o 127 i/o 179 i/o 24 i/o 76 i/o 128 tck, i/o 180 clka, i/o 25 i/o 77 i/o 129 vks, gnd 181 i/o 26 i/o 78 gnd 130 vpp, vcc 182 vcc 27 gnd 79 vcc 131 gnd 183 vcc 28 vcc 80 vcc 132 vcc 184 gnd 29 vsv, vcc 81 i/o 133 vsv, vcc 185 i/o 30 i/o 82 i/o 134 i/o 186 clkb, i/o 31 i/o 83 i/o 135 i/o 187 i/o 32 vcc 84 i/o 136 vcc 188 prb, i/o 33 i/o 85 i/o (wd) 137 i/o 189 i/o 34 i/o 86 i/o (wd) 138 i/o 190 i/o (wd) 35 i/o 87 i/o 139 i/o 191 i/o (wd) 36 i/o 88 i/o 140 i/o 192 i/o 37 i/o 89 i/o 141 i/o 193 i/o 38 i/o 90 i/o 142 i/o 194 i/o (wd) 39 i/o 91 qclkb, i/o 143 i/o 195 i/o (wd) 40 i/o 92 i/o 144 i/o 196 qclkc, i/o 41 i/o 93 i/o (wd) 145 i/o 197 i/o 42 i/o 94 i/o (wd) 146 i/o 198 i/o 43 i/o 95 i/o 147 i/o 199 i/o 44 i/o 96 i/o 148 i/o 200 i/o 45 i/o 97 i/o 149 i/o 201 i/o 46 i/o 98 vcc 150 gnd 202 vcc 47 i/o 99 i/o 151 i/o 203 i/o (wd) 48 i/o 100 i/o (wd) 152 i/o 204 i/o (wd) 49 i/o 101 i/o (wd) 153 i/o 205 i/o 50 i/o 102 i/o 154 i/o 206 i/o 51 i/o 103 tdo, sdo, i/o 155 i/o 207 dclk, i/o 52 gnd 104 i/o 156 i/o 208 i/o figure 2. terminal connections - continued .
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 14 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms .
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 15 dscc form 2234 apr 97 table iia. electrical test requirements . 1 / 2 / 3 / 4 / 5 / 6 / 7 / subgroups (in accordance with mil-std-883, tm 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) line no. test requirements device class m device class q device class v 1 interim electrical parameters (see 4.2) 1, 7, 9 2 static burn-in (method 1015) not required not required required 3 same as line 1 1*, 7* ) 4 dynamic burn-in (method 1015) required required required 5 same as line 1 1*, 7* ) 6 final electrical parameters (see 4.2) 1*, 2, 3, 7*, 8a,8b,9,10,11 1*, 2, 3, 7*, 8a,8b, 9, 10, 11 1*, 2, 3, 7*, 8a,8b, 9, 10, 11 7 group a test requirements (see 4.4) 1, 2, 3, 4**, 7, 8a, 8b, 9, 10, 11 1, 2, 3, 4**, 7, 8a, 8b, 9, 10, 11 1, 2, 3, 4**, 7, 8a, 8b, 9, 10, 11 8 group c end-point electrical parameters (see 4.4) 2, 3, 7, 8a, 8b 2, 3, 7, 8a, 8b 1, 2, 3, 7, 8a, 8b, 9, 10, 11 ) 9 group d end-point electrical parameters (see 4.4) 2, 3, 8a, 8b 2, 3, 8a, 8b 2, 3, 8a, 8b 10 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / blank spaces indicate tests are not applicable. 2 / any or all subgroups may be combined when using high -speed testers. 3 / subgroups 7 and 8 functional tests shall verify the functi onality for unprogrammed devices or that the altered item drawing pattern exists for programmed devices. 4 / * indicates pda applies to subgroup 1 and 7. 5 / ** see 4.4.1c. 6 / ) indicates delta limit (see table iib) shall be required where specified, and the delta values shall be computed with reference to the previous interim electrical parameters (see line 1). 7 / see 4.4.1d.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 16 dscc form 2234 apr 97 table iib. delta limits at +25c . device types parameter 1 / all i dd 10% of specified value of table ia i oz 10% of specified value of table ia t pblh , t pbhl 10 ns 1 / the above parameter shall be recorded before and after the required burn -in and life tests to determine the delta. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml -38535. the vendors listed in qml -38535 have submitted a certificate of compliance (see 3.6 herein) to dscc -va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc -va.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 17 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99527 10. scope 10.1 scope. this appendix establishes minimum requirements for microcircuit die to be supplied under two high reliability class levels (class q and m) and space application (class v). qml microcircuit die meeting the requirements of mil-prf-38535 and the manufacturers approved qml plan for use in monolithic microcircuits, multichip modules ( mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are specified herein. when available a choice of class levels are reflected in the pin. 10.2 pin. the pin is as shown in the following example: 5962 - 99527 01 q 9 x | | | | | | | | | | | | federal rha device device die die stock class designator type class code details designator (10.2.1) (see 10.2.2) (see 10.2.3) (see 10.2.4) (see 10.2.5) \_____________ _______________/ v drawing number 10.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 10.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function bin speed 01 32200dx 20,000 gate, field programmable gate array 251 ns 10.2.3 device class designator . the device class designator shall be a single letter identifying the product assurance level as follows: device class device requirements documentation q or v certification and qualification to mil-prf-38535 10.2.4 die code . the die code designator shall be a number 9 for all devices supplied as die only with no case outline. 10.2.5 die details . the die details designation shall be a unique which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.5.1 die physical dimensions. device type die size (x ,y) die thickness die detail figure number 01 503mils, 474mils 19 1 mils a a-1 10.2.5.2 die bonding pad locations and electrical functions . device type die detail figure number 01 a a-1 10.2.5.3 interface materials . device type top metalization backside metalization die detail figure number 01 ti-cap+al/cu /si ,9-12k a none ( backgrind) a a-1 10.2.5.4 assembly related information . device type glassivation die detail figure number 01 ox/nitride a a-1 10.2.5.4 wafer fab locations device type source die detail figure number 01 char tered semiconductor, singapore a a-1
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 18 dscc form 2234 apr 97 10.3 absolute maximum ratings . see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions . see paragraph 1.4 within the body of this drawing for details. 20. applicable documents . see paragraph 2.1, 2.2 and 2.3 within the body of this drawing for details. 30. requirements . 30.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf- 389535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions . the design, construction and physical dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions . the die physical dimensions shall be specified in 10.2.5.1 and on figures a-1. 30.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in 10.2.5.2 and on figures a-1. 30.2.3 interface materials . the interface materials for the die shall be as specified in 10.2.5.3 and on figures a. 30.2.4 assembly related information . the assembly related information shall be as specified in 10.2.5.4 and figures a-1. 30.3 electrical performance characteristics and post-irradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics are as specified in table 1 of the body of this document. 30.4 electrical test requirements . the electrical test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table 1. 30.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer?s identification and the pin listed in 10.2 herein. the certification mark shall be ?qml? or ?q? as required by mil-prf-38535 and ?m? for device class m in according to mil-prf-38535, appendix a. 30.6 certification of compliance . for device classes q and v, a certificate of compliance shall be required from a qml- 38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, the requirements of mil-prf-38535 and the requirements herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 30.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 30.8 processing options . since the device is capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations; two processing options are provided for selection in the contract, using an altered item drawing. 30.9 unprogrammed die delivered to the user . all testing shall be verified through wafer probe test as defined in 40.2. 30.10 manufacturer-programmed die delivered to the user . the programming integrity test shall be performed during programming. it is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 40. quality assurance provisions 40.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 19 dscc form 2234 apr 97 40.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer?s qm plan. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria within mil-std-883 test method 5007. b) 100% wafer probe (see paragraph 30.4) c) 100% internal visual inspection to the applicable class m, q or v criteria defined within mil-std-883 test method 2010 or the alternate procedures allowed within mil-std-883 test method 5004. 40.3 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf- 38535. inspections to be performed including groups a, b, c, d and e inspections and as specified herein except where mil-prf- 38535 permits alternate in-line control testing. 40.3.1 programmability. see 4.4.1.e for packaged die. 40.3.2 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. a) end point electrical testing of packaged die shall be as specified in table iia. b) for device class m, the devices shall be subjected to radiation hardness assured testes as specified in mil-prf-38535, appendix a, for the rha level being tested. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. all device classes must meet the post irradiation end-point electrical parameter limits as defined in table i at t a =+25 o 5 o c, after exposure, to the subgroups specified in table iia herein. 50. die carrier 50.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. 60. notes 60.1 intended use . microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit application (original equipment), design applications and logistics purposes. 60.2 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor- prepared specification or drawing. 60.3 substitutability . device class q devices will replace device class m devices. 60.4 configuration control of smd?s . all proposed changes to existing smd?s will be coordinated with the users of record for the individual documents. this coordination will be accomplished in accordance with mil-std-973 using dd form 1692, engineering change proposal. 60.5 record of users . military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd?s are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614)-692-0525. 60.6 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0674.
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 20 dscc form 2234 apr 97 figure a-1. bond pad functions and locations
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 21 dscc form 2234 apr 97 bond pad functions and locations pad # name center-x center-y pad # name center-x center-y 1 gnd -6146 5540 43 i/o -6146 -1666 2 vcc -6146 5342 44 i/o -6146 -1850 3 mode -6146 5142 45 i/o -6146 -2033 4 gnd -6146 4968 46 i/o -6146 -2216 5 i/o -6146 4795 47 i/o -6146 -2400 6 i/o -6146 4679 48 i/o -6146 -2583 7 i/o -6146 4551 49 i/o -6146 -2767 8 i/o -6146 4404 50 i/o -6146 -2950 9 i/o -6146 4256 51 i/o -6146 -3134 10 i/o -6146 4109 52 vcc -6146 -3345 11 i/o -6146 3962 53 i/o -6146 -3556 12 gnd -6146 3787 54 i/o -6146 -3739 13 i/o -6146 3612 55 gnd -6146 -3950 14 i/o -6146 3465 56 i/o -6146 -4161 15 vcc -6146 3290 57 i/o -6146 -4345 16 i/o -6146 3116 58 i/o -6146 -4528 17 i/o -6146 2968 59 i/o -6146 -4674 18 i/o -6146 2821 60 i/o -6146 -4795 19 i/o -6146 2674 61 i/o -6146 -4916 20 i/o -6146 2527 62 i/o -6146 -5037 21 i/o -6146 2380 63 gnd -6146 -5236 22 i/o -6146 2233 64 vcc -6146 -5482 23 vcc -6146 2027 65 gnd -5854 -5811 24 i/o -6146 1846 66 tms, binin, i/o -5713 -5811 25 i/o -6146 1723 67 tdi, binout,i/o -5573 -5811 26 i/o -6146 1600 68 i/o -5433 -5811 27 i/o -6146 1477 69 i/o -5288 -5811 28 gnd -6146 1296 70 i/o(wd) -5100 -5811 29 i/o -6146 1115 71 i/o(wd) -4913 -5811 30 i/o -6146 992 72 i/o -4725 -5811 31 i/o -6146 869 73 vcc -4510 -5811 32 i/o -6146 747 74 i/o -4294 -5811 33 gnd -6146 354 75 i/o -4107 -5811 34 vcc -6146 176 76 i/o -3919 -5811 35 vsv, vcc -6146 -262 77 i/o -3731 -5811 36 i/o -6146 -385 78 gnd -3516 -5811 37 i/o -6146 -508 79 i/o -3301 -5811 38 vcc -6146 -689 80 qclka, i/o -3113 -5811 39 i/o -6146 -932 81 i/o -2926 -5811 40 i/o -6146 -1116 82 i/o(wd) -2738 -5811 41 i/o -6146 -1299 83 i/o(wd) -2550 -5811 42 i/o -6146 -1483 84 i/o -2363 -5811 note - all x-y locations are in millimeters. figure a-1. bond pad functions and locations
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 22 dscc form 2234 apr 97 bond pad functions and locations pad # name center-x center-y pad # name center-x center-y 85 i/o -2175 -5811 127 gnd 5810 -5811 86 i/o(wd) -1987 -5811 128 gnd 6146 -5540 87 i/o(wd) -1800 -5811 129 gnd 6146 -5372 88 i/o -1612 -5811 130 vcc 6146 -5163 89 i/o -1424 -5811 131 i/o 6146 -4984 90 i/o -1237 -5811 132 i/o 6146 -4863 91 i/o -1049 -5811 133 i/o 6146 -4742 92 i/o -861 -5811 134 i/o 6146 -4615 93 i/o -674 -5811 135 i/o 6146 -4468 94 gnd -459 -5811 136 i/o 6146 -4316 95 gnd -181 -5811 137 i/o 6146 -4164 96 vcc 80 -5811 138 i/o 6146 -4012 97 vcc 304 -5811 139 i/o 6146 -3860 98 i/o 464 -5811 140 vcc 6146 -3680 99 i/o 652 -5811 141 i/o 6146 -3501 100 i/o 840 -5811 142 i/o 6146 -3349 101 i/o 1027 -5811 143 gnd 6146 -3169 102 i/o 1215 -5811 144 i/o 6146 -2989 103 i/o 1403 -5811 145 i/o 6146 -2837 104 i/o(wd) 1591 -5811 146 i/o 6146 -2685 105 i/o(wd) 1779 -5811 147 i/o 6146 -2533 106 i/o 1966 -5811 148 i/o 6146 -2381 107 i/o 2154 -5811 149 i/o 6146 -2229 108 i/o 2342 -5811 150 i/o 6146 -2077 109 i/o 2530 -5811 151 i/o 6146 -1939 110 i/o 2717 -5811 152 i/o 6146 -1801 111 i/o 2905 -5811 153 i/o 6146 -1663 112 qclkb, i/o 3093 -5811 154 i/o 6146 -1525 113 i/o 3281 -5811 155 gnd 6146 -1315 114 i/o(wd) 3468 -5811 156 i/o 6146 -1048 115 gnd 3684 -5811 157 tck, i/o 6146 -896 116 i/o(wd) 3899 -5811 158 vks, gnd 6146 -546 117 i/o 4087 -5811 159 vpp, vcc 6146 -171 118 i/o 4275 -5811 160 gnd 6146 179 119 i/o 4462 -5811 161 vcc 6146 386 120 vcc 4678 -5811 162 vsv, vcc 6146 566 121 i/o 4880 -5811 163 i/o 6146 718 122 i/o(wd) 5020 -5811 164 i/o 6146 870 123 i/o(wd) 5160 -5811 165 vcc 6146 1080 124 i/o 5301 -5811 166 i/o 6146 1290 125 tdo, sdo, i/o 5472 -5811 167 i/o 6146 1442 126 i/o 5612 -5811 168 i/o 6146 1594 note - all x-y locations are in millimeters. figure a-1. bond pad functions and locations ? continued
standard microcircuit drawing size a 5962-99527 defense supply center columbus columbus, ohio 43216-5000 revision level sheet 23 dscc form 2234 apr 97 bond pad functions and locations pad # name center-x center-y pad# name center-x center-y 169 i/o 6146 1746 211 i/o 2212 5811 170 i/o 6146 1899 212 i/o 2037 5811 171 i/o 6146 2051 213 i/o 1861 5811 172 i/o 6146 2203 214 i/o 1686 5811 173 i/o 6146 2355 215 i/o(wd) 1539 5811 174 i/o 6146 2507 216 i/o(wd) 1393 5811 175 i/o 6146 2659 217 i/o 1246 5811 176 i/o 6146 2811 218 pra, i/o 1099 5811 177 i/o 6146 2963 219 i/o 940 5811 178 i/o 6146 3115 220 clka, i/o 793 5811 179 vcc 6146 3295 221 i/o 646 5811 180 i/o 6146 3475 222 vcc 406 5811 181 i/o 6146 3627 223 vcc 90 5811 182 gnd 6146 3806 224 gnd -184 5811 183 i/o 6146 3986 225 gnd -599 5811 184 i/o 6146 4138 226 i/o -816 5811 185 i/o 6146 4290 227 clkb, i/o -1005 5811 186 i/o 6146 4431 228 i/o -1194 5811 187 i/o 6146 4563 229 prb, i/o -1384 5811 188 i/o 6146 4857 230 i/o -1586 5811 189 i/o 6146 5280 231 i/o(wd) -1775 5811 190 gnd 6146 5482 232 i/o(wd) -1964 5811 191 gnd 5874 5811 233 i/o -2153 5811 192 vcc 5560 5811 234 i/o -2342 5811 193 i/o 5358 5811 235 i/o(wd) -2531 5811 194 sdi, i/o 5228 5811 236 i/o(wd) -2720 5811 195 i/o 5098 5811 237 i/o -2909 5811 196 i/o(wd) 4951 5811 238 qclkc, i/o -3099 5811 197 i/o(wd) 4775 5811 239 i/o -3288 5811 198 i/o 4600 5811 240 i/o -3477 5811 199 vcc 4397 5811 241 gnd -3694 5811 200 i/o 4195 5811 242 i/o -3910 5811 201 i/o 4019 5811 243 i/o -4099 5811 202 i/o 3844 5811 244 i/o -4289 5811 203 i/o(wd) 3669 5811 245 i/o -4478 5811 204 gnd 3466 5811 246 vcc -4694 5811 205 i/o(wd) 3263 5811 247 i/o(wd) -4911 5811 206 i/o 3088 5811 248 i/o(wd) -5100 5811 207 qclkd, i/o 2913 5811 249 i/o -5245 5811 208 i/o 2737 5811 250 i/o -5370 5811 209 i/o 2562 5811 251 i/o -5495 5811 210 i/o 2387 5811 252 dclk, i/o -5713 5811 253 i/o -5854 5811 note - all x-y locations are in millimeters. figure a-1. bond pad functions and locations ? continued
standard m icrocircuit drawing bulletin date: 99 - 01 - 22 approved sources of supply for smd 5962 -99527 are listed below for immediate acquisition only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc -va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9952701qxc 0j4z0 a32200dx-cq256b 5962-9952701qyc 0j4z0 a32200dx-cq208b 5962-9952702qxc 0j4z0 a32200dx-1cq256b 5962-9952702qyc 0j4z0 a32200dx-1cq208b 5962-9952701Q9A 0j4z0 a32200dx-die 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 0j4z0 actel corporation 955 east arques ave. sunnyvale, ca94086 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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